High Precision I-V Characteristics SPICE Model for Silicon Carbide MOSFET

An enhanced SPICE model for Silicon Carbide (SiC) MOSFETs designed to match these devices' current-voltage characteristics precisely is proposed in this study. Compared to existing commercial SiC SPICE models, this model achieves higher fitting accuracy and thoroughly accounts for the non-ideal effects in small-scale devices. Specifically, the model focuses on the influence of channel length modulation to accurately depict the first quadrant ${I}_{\mathrm{D}\mathrm{S}}-V_{\mathrm{D}\mathrm{S}}$ characteristic curves. Ultimately, the model demonstrates significant improvements over existing models in terms of $\mathrm{R}^{2}$ value, RMSE value, and MAPE value, establishing its superior fitting capabilities.