Beyond CMOS: Unlocking Low-Power with TFETs

This paper delves into the realm of energy-efficient electronics by exploring the prospects of Tunnel Field-Effect Transistors (TFETs) in facilitating low-power capabilities. By scrutinizing different TFET structures, including III-VTFETs, Heterojunction, Nanowire, Dual Material Gate, Gate-All-Around TFETs, and Double Gate TFETs, the study expounds on their unique design features. The analysis is a synthesis of previous research aimed at providing a comprehensive overview of TFET structures that can be valuable for academics and practitioners alike. This article extends beyond traditional CMOS and offers an insightful glimpse into the nascent field of energy-efficient electronics.