Vertical GaN FinFET with Small form Factor and High Reliability for Implementation of 6G Communication

The development of 6G communications requires fast switching and high-power electronics with high reliability. Vertical GaN FinFET is one of the next-generation power devices for 6G communication due to its small form factor with high breakdown voltage and reliability. In this work, we present the fabrication strategy for implementing a vertical GaN FinFET structure. Optimized vertical Fin etch, planarization and process integration give guidelines for developing vertical GaN FinFET.