In-Situ Condition Monitoring of SiC-MOSFETs During Active Power Cycling Using Acoustic Emission Testing

This paper analyses the potentials of acoustic emission testing during active power cycling of SiC-MOSFETs. For the first time, it can be shown that the acoustic measurements provide meaningful insight into the health status of fully-encapsulated SiC-MOSFETs during lifetime testing. This noninvasive testing method shows wear-out much prior to the conventional failure criterion of $V_{\text{DS}}$ -increase.