An analytic model for MODFET capacitance-voltage characteristics

An analytic model for the capacitance-voltage (C-V) characteristics of n-channel modulation doped FETs (MODFETs) is derived. Gauss law is used to relate the net areal gate charge density in an AlGaAs/GaAs MODFET to the electric field intensity at the metal-AlGaAs interface. An analytic expression for the electric field intensity which accounts for the neutralization of donors and the generation of free electrons is derived. The gate capacitance is derived as a closed-form analytic function of the gate voltage. The expression derived is easily computable and affords physical insight. The results, when compared with numerical calculations and experimental data, yield good agreement over a wide range of gate voltages.<
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