Diode-Clamped Linear Amplifier using Only n-channel MOSFETs Applied Separated Gate Drivers

This paper proposes a diode-clamped linear amplifier (DCLA) using only n-channel MOSFETs applied by separated gate drive circuits. Conventional DCLA uses the source follower function of MOSFETs and therefore require an n-channel MOSFETs and a complementary p-channel MOSFETs. In addition, high voltage reference signals are required due to unity voltage gain. The proposed DCLA can be composed of only n-channel MOSFETs and directly controls the gate-source voltage of the MOSFETs resulting in low voltage drive signals. In this paper, the proposed circuit was experimentally verified using voltage feedback control, and it was confirmed that the efficiency was improved compared to conventional circuits and that the THD of the output voltage was approximately 2%.