Fabrication and Evaluation of Flexible Resistive Switching Devices Using Liquid Metal and Flexible Substrates

The goal of this study is to fabricate and characterize resistive switching memory (RSM) using liquid metal integrated with flexible substrates. RSM devices were fabricated on polyethylene terephthalate (PET) substrates using deposition and photolithography techniques. The current-voltage (I–V) characteristics of the fabricated RSM devices were measured, revealing several resistive switching phenomena. Notably, the RSM devices demonstrated resistive switching behavior even when bent. Ohmic conduction was observed in the low-resistance state, while the I–V characteristics under bending conditions were analyzed for Poole-Frenkel (P-F) and Schottky conduction mechanisms. The analysis indicated that Schottky conduction occurred in the high-resistance state.