Characterization and Understanding of Cosmic Ray-Induced Soft Errors in SRAMs

This paper reviews soft errors in SRAM at ground level, focusing on neutron-induced soft error rates (SER) and muon-induced single event upsets (SEUs) across different SRAM technologies. The study explores SER characterization methods for terrestrial environments using accelerator facilities, presenting new findings on muon-induced SEUs in 12-nm FinFET, 28-nm, and 65-nm planar SRAMs.