A Ka Band Dual-Channel Amplitude And Phase Control Multi-Function Chip Based on GaAs E/D PHEMT Process

This paper presents a design approach for a novel 24–28 GHz dual-channel amplitude-phase control multi-function chip, which is constructed using the GaAs enhancement and depletion pseudomorphic high electron mobility transistor (E/D PHEMT) process. Each channel of the chip integrated a single-pole-double-throw (SPDT) switch, a digital phase shifter with 6 bits, a digital attenuator with 5 bits and a gain compensation amplifier. The measurement results show under a voltage of +5 V, the gain of the receiving channel is greater than 1 dB, the output power 1 dB compression (OP1dB) is greater than -2 dBm, and the current is 25 mA. The gain of the transmission channel is greater than 0.5 dB, the OP1dB is greater than 8.5 dBm, and the current is 40 mA. The root mean square error of the 64 state phase-shifting is less than 3 °, and 32 state attenuation root mean square error is less than 0.4 dB. The chip size is 6.2 mm × 5.0 mm. The proposed multi-function chip demonstrates high amplitude-phase control accuracy, small chip size, excellent performance and strong universality, which can be widely used in microwave transceiver modules.