Design of D-Band power amplifier based on 0.13 um SiGe process

This paper introduces the design of a terahertz power amplifier chip with working frequency of 120–160 GHz based on 0.13 um SiGe process. The amplifier achieves high gain through the use of a differential cascode structure and a two-stage amplification structure. On-chip transformers are employed to design the input, output, and interstage matching circuits because the area is much smaller compared to microstrip line matching circuits. The accurate design of the terahertz power amplifier chip is realized through full-layout electromagnetic simulation. Simulation results indicate that the small-signal gain is 22 dB, the output 1 dB compression point is 10 dBm, and the power added efficiency is 6.2% at the center frequency of 140 GHz. The saturation power within the operating band is in the range of 9.7-11.9 dBm, and the 3 dB gain frequency range is from 128 GHz to 153 GHz.