An Improved Double Pulse Circuit Model for Predicting Accurate Dynamic Behaviour and Switching Losses Of Mosfets

Accurate PowerMOS SPICE models and reliable circuits for device prototyping are crucial to provide meaningful feedback to platform developers. System simulation is key in speeding up the delivery of new technologies to a fast-changing market. Double pulse is a widely used system for dynamic performance investigation, but a simplified schematic of the measurement circuit has insufficient accuracy. In this paper, an improved double pulse schematic is proposed which includes an appropriate gate driver and parasitic elements from both the Printed Circuit Board (PCB) and discrete devices. A new method to extract these parasitic effects is demonstrated. Our study reveals that with this approach the gap between simulation and experimental data is reduced from 25% to 8% [1].