Simultaneously Improved Electrical Characteristics of Ge n/p-FinFETs and Inverter With Oxidized Alloy-Like Hafnium Nitride Interfacial Layer

In order to improve the electrical characteristics of Ge n- and p-channel FET simultaneously, an interfacial layer (IL) engineering is proposed on Ge nFinFET, pFinFET, and CMOS inverter by using an alloy-like IL with about 10% oxidation. Thanks to trade-off balance between alloy-like and oxygen-rich IL with a suitable oxidation process, both Ge nFinFET and pFinFET exhibit lower EOT value, lower leakage current, fewer border trap, lower DIT value, lower S.S. value, larger ION/IOFF, higher drive current, better reliability characteristics, more symmetrical VOUT-VIN and higher peak voltage gain.