Two-dimensional numerical analysis of lasing characteristics for self-aligned structure semiconductor lasers

Lasing characteristics in 0.78 mu m AlGaAs-GaAs self-aligned structure (SAS) lasers are calculated on the basis of a newly developed two-dimensional analytical method. The calculated results are compared in detail with experimental results for MOVPE (metalorganic vapor phase epitaxial) grown SAS lasers. It is shown that calculated results agree well with experimental results, and that the newly developed two-dimensional simulator is very effective in calculating actual lasing characteristics accurately. The optimum design conditions for AlGaAs-GaAs SAS lasers obtained from experimental and calculated results are discussed.<
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