Analysis of Silicon Germanium Core Shell Based Junctionless Gate All Around MOSFET

A junctionless Gate All Around MOSFET in which Si material isreplaced by SiGe (Silicon Germanium) is to be proposed in paper. Here, the electrical characteristics of SiGe MOSFET device at different dielectric constants (k = 3.9 and k =15) are to be analysed and further, compare the characteristics of Si and SiGe based devices at k = 3.9. Then, in this paper analyse the Transconductance (gm) of SiGe based device at different dielectric constants (k = 3.9 and k = 15) and then, compare the transconductance of the devices using Si and SiGe materials. The various performance parameters like OFF current, ON current, Threshold voltage, DIBL(Drain Induced Barrier Lowering) and Subthreshold Slope(SS) are also analysed and compared at different dielectric constants of the proposed device.