Switching Performance Evaluation of two State-of-the-Art SiC MOSFETs

This paper compares the switching performance of two state-of-the-art Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) utilising the Double Pulse Test method. The evaluation focuses on assessing the impact of key parameters such as total gate charge $\left(Q_{g}\right)$ and on-resistance $\left(R_{O N}\right)$ on the switching characteristics of the MOSFETs. Through experimental investigation, the switching behaviours, including turn-on and turn-off times, switching losses, and body-diode reverse recovery characteristics ($Q_{r r}$), are analysed and compared between the two devices. The results demonstrate that a SiC MOSFET with a lower total gate charge and higher on-resistance exhibits superior switching performance compared to a SiC MOSFET with a higher total gate charge and lower on-resistance. The study concludes that prioritising low total gate charge for faster switching for pulsed power applications is more critical than minimising conduction losses through a lower $R_{O N}$.