A 640-Gb/s 4 × 4-MIMO D-Band CMOS Transceiver Chipset

This work presents a D-band (110–170 GHz) CMOS transceiver (TRX) chipset that covers a 56-GHz (114–170 GHz) signal-chain bandwidth. Both the transmitter (TX) and the receiver (RX) operate as heterodyne architectures with external intermediate frequency (IF) and local oscillator (LO) signals. An eight-way low-Q power-combined power amplifier (PA), a two-way low-Q power-combined low-noise amplifier (LNA), wideband-impedance-transformation passive mixers, common-source-based cascaded distributed amplifiers (DAs), and a low-loss wideband chip-to-waveguide printed circuit board (PCB) transition are proposed with improved bandwidth and linearity to support high-order wideband quadrature amplitude modulation (QAM) signals. The TRX chipset was fabricated using a 65-nm CMOS process. The TX achieves a 13-dBm saturated output power at 130 GHz with 1150-mW dc power. The RX achieves a 12-dB noise figure (NF) with 550-mW dc power. The proposed TRX chipset achieves a data rate of 200 Gb/s by 32QAM in the single-input-single-output (SISO) over-the-air (OTA) measurement at 0.32 m. A data rate of 150 Gb/s by 16QAM is realized with 43-dBi antennas at 15 m. Additionally, a 640-Gb/s $4{\times }4$ OTA line-of-sight multiinput multioutput (LOS-MIMO) is demonstrated at 0.52 m.