Research on Gallium-Arsenide Differential Stages and Operational Amplifiers for High-Temperature Applications

The problems of designing high-temperature gallium-arsenide differential stages and operational amplifiers based on them using gallium-arsenide transistor template models are considered. A comparison of the results of experimental studies of the volt-ampere characteristics of gallium-arsenide MESFETs at temperatures 25°C and 350°C with the results of computer modeling of these transistors based on template models is given. A classical gallium-arsenide operational amplifier with three differential stages in series with resistive loads at T=25°C and T=350°C is investigated. The amplitude-frequency characteristics of the operational amplifier are given, which show that for the three-stage version of the operational amplifier construction, the temperature increase up to T=350°C leads to a 30 dB gain reduction. The obtained results are recommended to be used in the design of high-temperature operational amplifiers for space and nuclear instrumentation, as well as processing of sensor signals in engine compartments and braking mechanisms of vehicles.