Computer Simulation of EMI Effects in a 7400 TTL NAND Gate

Computer simulated results of sinusoidal interference in a 7400 TTL NAND gate integrated circuit are presented in this paper. The interference is impressed at the input, output, power line, and ground connections. Parameters are defined in order to characterize degradation in the voltage and current waveforms. These are plotted versus amplitude and/or frequency of the interferer. Results are also presented for pulsed interference.