Integra-NANDSim: A New VT Distribution Simulator of 3-D NAND Flash Memories

In this paper, we propose a new virtual experiment environment for threshold voltage $(V_{T})$ distribution of 3-D Gate-All-Around (GAA) NAND flash memories with a spirit of Monte-Carlo (MC) simulation. Cell variation (CV) is modeled as a random normal distribution, and physical compact model is implemented to track threshold voltage of each cells. Influence of each widening factors and width transient of $V_{T}$ distribution are thoroughly investigated to focus on the difference from the conventional Monte-Carlo simulation. The resulting width transient suggests that the proposed simulation utilizing the compact model is more proactive and useful in predicting the distribution width, which is a critical factor for reliability control.