Modeling & Analysis of Quantum Confinement and Ballistic Transport Phenomena in 3D FinFET

This research paper describes the modeling and analysis of quantum confinement of carriers and the ballistic transport phenomenon in advanced 3D FinFET structure. We use Bohm Quantum Potential (BQP) model to perform modeling, simulations and to study the quantum confinement of carrier density in advanced 3D FinFET device. During the ballistic phenomenon, carrier moves without any collision and scattering across the channel of the device. Non-Equilibrium Green's Function (NEGF) is discussed for the computation of ballistic IV curves. 3D comparison of drift-diffusion and Non Equilibrium Green's Function (NEGF) models for nanoscale FinFET is performed and quantum confinement in FinFET channel is presented. We used the advanced structure of silicon FinFET having thickness 6x7nm and gate length of 30nm to investigate the quantum confinement of carriers and to compare the Non Equilibrium Green's Function (NEGF) and classical drift diffusion models.