A 40 μm diameter planar diffused In0.53Ga0.47As avalanche photodiode (APD) with a triple-stage cascaded InAlAs/InAlGaAs multiplication structure are designed and fabricat...
Impact Statement:Planar In0.53Ga0.47As avalanche photodiodes (APDs) under the cascaded multiplication scheme are demonstrated for the first time. A triple gain stage multiplication struct...Show More
Abstract:
A planar In0.53Ga0.47As avalanche photodiode (APD) with a triple-stage cascaded InAlAs/InAlGaAs multiplication structure is designed and fabricated. Double zinc-diffusion...Show MoreMetadata
Impact Statement:
Planar In0.53Ga0.47As avalanche photodiodes (APDs) under the cascaded multiplication scheme are demonstrated for the first time. A triple gain stage multiplication structure based on the InAlAs/InAlGaAs material system is designed and fabricated. Good comprehensive performances by simultaneous incorporating of the superiorities of both planar photodiode structures and cascaded multiplication designs are achieved. Very low dark current levels of 4.8 nA Vbr-1, high gain bandwidth product of 216 GHz, and a relatively low F of 6.3 at an M of 77 are realized for a hole-initiated InAlAs multiplier at 200 K. Discussions by addressing of the measured and the simulated results based on the corrected DSMT theory are also given. These results suggest such a planar cascaded design is potential in lowering of the excess noise without sacrificing of the dark current and the high speed performances, and is likely to serve as an important reference for the APD community in the designing of improved st...
Abstract:
A planar In0.53Ga0.47As avalanche photodiode (APD) with a triple-stage cascaded InAlAs/InAlGaAs multiplication structure is designed and fabricated. Double zinc-diffusion p-n junction is formed to suppress the perimeter premature breakdown. A low dark current of 4.8 nA at around breakdown voltage is obtained at room temperature for a 40~\mu m diameter device with a maximum gain-bandwidth product of 216 GHz. The E-field profile is modulated by doping of a thin In0.52Al0.48As subcharge layer within each multiplication stage. Moreover, electron and hole potential wells are also introduced by the In0.52Al0.24Ga0.24As layers within each stage. The measured hole-initiated maximum gain factor and excess noise factor are 77 and F=6.3 at 200 K, respectively, which well agree with the predicted results base on the dead-space multiplication theory. These results indicate the planar multi-stage multiplication regime is a viable route for fabrication of APDs towards low excess noise while maint...
A 40 μm diameter planar diffused In0.53Ga0.47As avalanche photodiode (APD) with a triple-stage cascaded InAlAs/InAlGaAs multiplication structure are designed and fabricat...
Published in: IEEE Journal of Quantum Electronics ( Volume: 61, Issue: 1, February 2025)
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