Leakage Current Measurements of Amorphous Silicon Carbide Encapsulation for Implantable Microelectrode Arrays

Advancements in implantable microelectrode arrays (MEAs) for neural applications are hindered by challenges in maintaining long-term stability within the body. Amorphous silicon carbide (a-SiC), recognized for its chemical inertness and biocompatibility, emerges as a promising material to address these challenges. Our findings demonstrate that IDEs with a-SiC exhibit high electrical insulation on the order of TΩ emphasizing its potential for enhancing encapsulation reliability. The primary objective of this research is to develop a methodology for evaluating the encapsulation effectiveness of a-SiC under electrical stress. Utilizing interdigitated electrodes (IDEs), the research applies a non-thermal, voltage-driven approach to assess a-SiC's encapsulation. The resistance of a-SiC encapsulated IDEs, crucial for implantable device functionality, is analyzed through this process. This approach not only reinforces the understanding of a-SiC as a viable material for MEAs and identifies an electrical methodology particularly suitable for evaluating implantable encapsulation.Clinical Relevance—This study developed a methodology for measuring leakage current in a-SiC encapsulation, which can be implemented for voltage-driven accelerated testing of implantable microelectrode arrays