Design and Implementation of Double Pulse Test Setup for WBG Devices Switching Characterization

Now a days power electronics is developing at a faster rate in the electrical domain, which increases the demand for effective semiconductor devices that can withstand high voltage, current ratings, temperatures and higher switching frequency. So power electronics technology is moving to Wide Band Gap (WBG) devices such as Silicon carbide (SiC) and Gallium Nitrate (GaN). So it is important to get these devices accurate characteristics such as Eon, Eoff, rise time (tr), fall time (tf), switching speed (dv/dt, di/dt, peak overshoot, etc.) of these discrete devices. To characterise these devices, a test has to perform at the different test conditions, so-called "Double Pulse Test" (DPT). This test plays a vital role in the industry to design converters for user operating conditions. Performing the test on multiple test cases such as various voltages, currents, gate resistances and temperatures to understand the characteristics of the switching devices. The main motto of this project is to design and build the double pulse characterization set up for discrete WBG MOSFETs. Use test data to do modelling and simulation of semi-conductor switching characteristics/loss estimation. A test has been performed for the SiC device C3M0015065K in the TO-247 package, and the results are shown in this paper.