Fabrication of GaN-on-Diamond HEMT Structures Using PCD on a Back Plate for Low Cost and High Heat Dissipation

The self-heating in GaN-HEMTs poses a significant challenge, leading to diminished device performance and reliability. Consequently, there is growing interest in utilizing diamond, renowned for its exceptionally high thermal conductivity, as a heat-spreading material for HEMTs. In this study, we aimed to fabricate GaN-HEMTs on polycrystalline diamond grown on a back plate, aiming to achieve low-cost GaN-on-diamond HEMT structures utilizing the surface-activated bonding method.