Design of a 650V Full-Bridge GaN Module with Integrated Gate Driver and Decoupling Capacitors

This work presents the design of a Full-Bridge power module with three parallel 650 V, 150 A GaN dies per switch. A wire bond free planar interconnect structure is used for the module design with power overlay design technology. A PCB-based power loop decoupling capacitor stage is introduced to ensure symmetrical and low power loop inductance of $\approx \mathbf{5 n H}$. Additionally, the gate-drive stage is integrated into the module. Spice simulation results based on extracted module parasitics are presented for the critical switching transients and energy losses. Thermal simulation models estimate a power delivery capability of 90kW with $\eta=97.8 \%$ at 100kHz switching frequency and $70^{\circ} \mathrm{C}$ module base temperature.