Structural Variation During Annealing at Diamond/Silicon Heterointerfaces Fabricated by Surface Activated Bonding

Structural and compositional variation at a diamond/silicon heterointerface, fabricated by surface activated bonding at room temperature, is examined during annealing at temperatures of 600 to 1000 °C, by scanning transmission electron microscopy. The bonding process causes the amorphous layer with carbon and silicon atims at the interface, and the layer is recrystallized at temperatures above about 900 °C, forming a crystalline silicon carbide compounds.