Pass Logic-Gates Based on Electrolyte-Gated Field-Effect Transistors with Metal Oxide Channels

Logic-gates are key building blocks in digital electronics microelectronic circuits. When printing complex microelectronic circuits, the performance and reliability of printed logic-gates might introduce challenges in designing novel applications. For that reason, we design pass logic-gates, such as AND, OR, and XNOR, based on electrolyte-gated field-effect transistors with indium oxide channel. The presented results demonstrate that printed pass logic-gates significantly reduce the propagation delay time compared to traditional logic-gate designs. In addition, for a number pass logic-gates the transistor count is reduced over traditional logic-gates. Therefore, pass logic-gate designs can in turn enhance the reliability and performance of microelectronic circuits in printed electronics.