Low Temperature Fabricated Solution Processed Diodes with Record High Current Density of 603 A/cm2

The ability to solution process electronic materials and devices with useful performance matrix and adequate reliability has created a new domain of substrate independent and low-cost fabrication compatible emerging electronic devices. In this regard, nanoparticulate-based printable inks are widely used to fabricate various solution-processed and flexible electronic devices, where the low-temperature processability on inexpensive polymer/ paper substrate is of crucial importance. However, films formed by nanoparticles often show poor performance compared to their solid (thin) film counterpart due to the presence of a large volume fraction of porosity and binders/ ligands that are present in the dried nanoparticulate film. In contrast, here we fabricate highly reproducible hetero-junction diode, at room atmosphere, from surfactant-free and highly compact crystalline indium gallium oxide (IGO) nanoparticulate film that exhibits an unprecedented large current density of $603 \mathrm{A}/\text{cm}^{2}$ at 1 volt. In order to fabricate the diodes, a hybrid solution processing technique was used that combines spin coating, drop casting, and ink-jet printing of device components.