LEAP: LLW RowHammer Mitigation System

Adopting LLW DRAM in modern mobile systems has increased vulnerability to RowHammer attacks due to shorter row cycle times. This paper introduces LLW Line Encrypted Aggressor Pinning (LEAP), a high-security, high-performance, low-power in-DRAM RowHammer mitigation scheme for LLW DRAM systems. It features line-level address encryption and data pinning, aligning with LLW's characteristics, and enhances performance by 2.4% while reducing power consumption by 6.8% compared to traditional victim refresh methods.