Measurement of carrier properties in InSb using Faraday rotation effect

The carrier properties of n-type InSb doped with tellurium at liquid nitrogen temperature have been estimated by means of the transmission of a millimeter wave (119.3 GHz) propagating along a magnetic field up to 4 T. The information on the carrier properties is measured by the Faraday rotation arising from the difference between the phase velocities. The advantage of this method lies in the fact that it allows both the electron density and effective mass to be measured simultaneously.