Measurement results of packaged millimeter-wave silicon IMPATT diodes

Recently, a new technology process for manufacturing packaged millimeter-wave silicon IMPATT diodes has been introduced. Detailed measurement and simulation results for these devices, operating in the D-band frequency range, are compared here. Results are obtained in rectangular, reduced height, waveguide resonators. CW RF-output power of more than 100 mW at 135 GHz and 50 mW at 150 GHz are reported.