Radiation Evaluation of the TPS7H6003-SP Radiation-Hardness-Assured (RHA) Gallium Nitride (GaN) Field Effect Transistor (FET) Gate Driver

Single Events Effect (SEE) characterization and total ionizing dose (TID) results for the TPS7H6003-SP 200 V half-bridge GaN gate driver are summarized, showing very robust SEE performance up to LETEFF=75 MeV.cm²/mg and excellent TID behavior.