Parametric Extraction Method of Equivalent Circuit for SOI MEMS Pressure Sensor Rapid SPICE Simulation

This letter presents a method for parametric extraction of sensing elements of silicon-on-insulator (SOI) microelectromechanical system pressure sensors utilizing SPICE simulation with integrated circuit (IC) electronic interface. This approach allows the performance optimization of sensing elements and readout electronics in early design stage. The piezoresistive sensing element based on SOI technology is manufactured by means of deep reactive ion etching on predoped SOI wafers. The finite-element model (FEM) of the sensing element is used for SPICE sensor model extraction. These parameters translate to a Verilog-A sensing element model. The set of simulation with IC electronic interface consists of an instrumentation amplifier was performed. The 11% difference in fullscale (FS) nonlinearity for the FEM and the SPICE model was obtained.