Suppression of interface degradation in InGaAsP inP buried heterostructure lasers

In InGaAsP/InP buried heterostructure (BH) lasers, the degradation of BH interface between first- and second-growth step layers can be suppressed by employing the melt back process just before the second-step layer growth. It is confirmed this burying process give more reliable BH lasers than the conventional burying process. From the viewpoint of BH interface degradation, lasers lasing at 1.5 μm, where the melt back process naturally occurs during BH formation, are found to be more reliable than those lasing at 1.3 μm.