A 28-nm 135.19 TOPS/W Bootstrapped-SRAM Compute-in-Memory Accelerator With Layer-Wise Precision and Sparsity

Artificial intelligence (AI) edge devices demand high energy efficiency as well as inference accuracy. SRAM-based compute-in-memory (CIM) accelerators have great potential for power reduction but still need to exploit higher throughput and better linearity performance. To meet edge-AI computing demands by CIM works, it is crucial to optimize algorithms and parameters for specific circuit systems to achieve hardware acceleration. This work firstly employs neural network search (NAS) method to find out the layer-wise optimized precisions and sparsities for convolutional neural networks (CNNs). Then, a 144-Kb charge-domain signed mixed-precision (2/4/8-bit) CIM accelerator employing bootstrapped SRAM cells with 9-transistors and 1-capacitor (9T1C) structure is proposed that incorporates a bit-level sparsity-aware analog-to-digital converter (ADC). This work not only achieves highly linear parallel accumulation operations to meet AI computing demands but also implements a hardware and software co-optimization system tailored to specific data characteristics. The design is verified on NAS-optimized networks VGG-16 and ResNet-18 using Cifar-10 dataset, which could achieve an equivalent accuracy at 4-bit of 68.68% while maintaining a high energy efficiency at 2-bit of 135.19TOPS/W by measurements.