Phosphorus Doping of CdTe Absorber Using Phosphine Gas

There have been numerous efforts to dope cadmium telluride (CdTe) devices using group V elements such as arsenic (As). However, studies of phosphorus (P) doping are more limited. Here, we report doping of CdSeTe (CST) devices using phosphine (PH3) gas in a plasma enhanced chemical vapor deposition (PECVD) reactor. EDS and SIMS depth profiling indicate that the CdTe surface has a substantial amount of phosphorus. We will discuss surface morphology, EDS analysis, and device results after the P-doping.