Stimulated emission from Ga1-xAlxAs diodes at 77°K

Ga
1-x
Al
x
As was found to be a suitable material for semiconductor lasers. Stimulated emission from Fabry-Perot type of diodes has been observed at 77°K and 273°K. The highest peak energy of the laser line at 77°K so far is 1.65 eV (
l = 7500
Å). The Ga
1-x
Al
x
As material was obtained by a liquid phase epitaxial method, described in a previous paper.