Luminescent Temperature Measurements and Thermal Resistance Characterization of Laser Power Converter Photovoltaics

Techniques for measuring the temperature of active absorber layer(s) in laser power converter photovoltaics using electro- and photo-luminescence spectroscopy are described. These techniques enable absorber layer temperature measurements at a variety of biasing or illumination conditions, including the maximum power point, making them useful for laser power converter temperature measurements from the wafer-level to the receiver-level. The techniques are utilized to measure the absorber layer temperature and estimate the thermal resistance in metamorphic InGaAs single-junction photovoltaic cells, packages, and submodules.