MoS2 Transistor with Polymethyl methacrylate (PMMA) Gate Oxide for Low-Power Applications

The purpose of this study is to enhance the performance of a thin layer of MoS2 as a MOSFET using low-k dielectric. This research paper investigates the impact of low-k dielectric materials used as gate oxides on the performance of molybdenum disulfide MoS2 transistors. The paper explores the use of polymethyl methacrylate (PMMA) as a gate oxide material. Additionally, a comparative analysis is conducted between PMMA and silicon dioxide $\left(\mathrm{SiO}_{2}\right)$ based on their gate transfer characteristics and drain characteristics, aiming to analyze their effects on the operational efficiency of MoS2 transistors. This study explores that cut-in voltage for PMMA is lower than SiO2 indicating a lesser threshold voltage for the device. Devices with lower threshold voltage are suitable for low-power applications.