STT-MRAM Based ESD and EFT Immunity Analysis

This study analyses the Electromagnetic Immunity (EMI) of STT-MRAM. By exhaustively exploring and verifying the Electrostatic discharge (ESD) and Electrical Fast Transient (EFT) of STT-MRAM, the impact of ESD and EFT on the performance of STT-MRAM is investigated, the potential threat of transient electromagnetic interference to STT-MRAM memory is revealed, and suggestions are made to improve its electromagnetic compatibility (EMC), which provides an important reference for its reliable application.