Signal Integrity Analysis for Resistive Random Access Memory Crossbar Array by Compact Model With Consideration of Electro-Thermal Coupling Effects

The increasing integration density of resistive random access memory (RRAM) arrays leads to a consequential rise in the significance of electro-thermal and parasitic effects in crossbar arrays. This article aims to analyze the electro-thermal coupling and signal integrity in an RRAM-based array. The equivalent electrical/thermal circuit networks are built for the RRAM array based on the compact model of the RRAM device. Moreover, the partial element equivalent circuit (PEEC) method is used to extract the parasitic parameters of interconnects, which improves the modeling and simulation efficiency as compared with commercial software. Signal integrity analysis in 1 MB ( $1024\times 1024$ ) crossbar array, including the impact of thermal crosstalk on device operation, the impact of cell resistance and number of cells in low resistance state (LRS) on IR-drop, and the impact of array size on parasitic crosstalk and sneak paths, are further explored. Finally, the relationship between voltage drop and cell index in the array is explored to achieve voltage compensation for IR drop, and a reading scheme with existence of sneak paths is proposed to accurately identify the resistance state of cells in 1R crossbar arrays.