Revealing the Noise Dependent Sensitivity of a Junctionless FinFET-Based Hydrogen Sensor with Ferroelectric Gate Stack

This paper reveals the role of Flicker (1/f) Noise and process variations (i.e., random dopant fluctuation, RDF) on the sensitivity of the Junctionless FinFET-based hydrogen gas (H2) sensor with a ferroelectric (FE) gate stack, which offers the privilege of Negative Capacitance (NC) effect. In general, the FE-stack has two possible configurations, i.e., MFMIS and MFIS. Therefore, the sustainability and selectivity of both configurations under the influence of Noise on the sensor's sensitivity have been thoroughly investigated using well-calibrated TCAD models. With varying H2 concentrations (in ppm) and FE thicknesses in both configurations, the acquired electrical characteristics, sensing metrics, and noise spectral density (SIDS) reveal that the MFMIS is an appropriate choice for realizing a FET -based sensor.