A TCAD to SPICE Simulation Framework for Analysis of Device to Circuit BTI and HCD Aging: Invited Paper

Time kinetics of FET aging due to BTI and HCD are simulated by identical physical models in standalone and TCAD frameworks, and calibrated using experimental data from GAA SNS p- and n- FETs. The calibrated standalone physical models are used in a circuit aging simulator, making it compatible with cycle-by-cycle input excitations. The circuit simulator is used to estimate aging under DVFS and random input activity. Results are compared against conventional circuit aging simulation, and the significance of cycle-by-cycle simulation is highlighted.