Calibration Insights of Phosphorus Diffusion Model for NMOS FDSOI : Pathway to Advanced Technology Nodes

This paper evaluates the lateral dopant diffusion for source and drain junction profiles of NMOS FDSOI devices. Parameters of the phosphorus diffusion model in an in-situ doped epitaxial Source/drain are calibrated using TCAD simulations, and validated against experimental data, which vary with spike anneal temperatures, epitaxy concentrations, and gate lengths. After carefully adjusting these parameters, we incorporate them into a global simulation approach for device scaling. This enables the transition from current baseline FDSOI technology to even advanced FDSOI technology nodes.