Characterization of Schottky Diodes at Wafer Level for Frequency Multipliers Applications Based on RF Coplanar Measurements

While Schottky diode for THz generation have been extensively studied over last decades, technological developments are still required to reach the physical limits of these devices, such as breakdown voltage or sub-μm devices, but also efficient thermal management in particular before their integration into waveguide packaging. We propose to investigate the DC/RF performances at device level without any integration/packaging encapsulation that require complex and time-consuming efforts. Thus, we report on initial characterization of on-wafer GaAs Schottky diodes, used as frequency doubler and pumped at 95 GHz.