SiGe Transmitter and Receiver with Integrated Mixers and LO Chains for K/Ka Band Phased Array Systems

This paper presents a Ka-band transmitter and a K-band receiver RFICs for SatCom Phased-Array Systems. The circuits are fabricated by using 130-nm SiGe:C BiCMOS technology. They share the same architecture having 4-channels RF front end with integrated mixers and LO chain including the frequency multiplier. RX measurements results have shown 40 dB of gain, 2.7 dB of NF and 17 dB of image rejection with a total power consumption of 484 mW. TX RFIC achieves 25 dB of peak small signal gain and 8.5 dBm of OP1dB with a total power consumption of 690 mW. The area size, for both chips, amount to 12 mm² (pads included).