1.3 µm buried-heterostructure lasers on p-type InP substrates

This paper describes 1.3μm BH lasers using p-type InP substrates. The description includes device design, fabrication process, laser characteristics, and aging results. The p-type substrate BH structure is suitable for high current operation because of superior suppression of leakage current and blocking layer endurance characteristics against voltage. The laser performances are remarkably improved by zinc doping into the active layer. These lasers with properly doped active layer exhibit good laser performance such as light pulse of 800 mW/facet. In the approximate 3000 h of aging tests for nonscreened lasers operated at high current pulses, only two devices out of nine failed in the infant failure mode.