Descriptor: MOSFET Electrical Simulation Dataset (MESD)

This article introduces the metal–oxide–semiconductor field effect transistor (MOSFET) electrical simulation dataset, MESD, an extensive collection of $I$-$V$ and $C$-$V$ characteristics data simulated across different foundries’ Berkeley short-channel IGFET models (BSIMs). The MESD dataset covers a range of bias voltages, temperatures, and MOSFET physical dimensions across several process technologies from 3 to 350 nm. We have detailed the design methodology used in the generation of the dataset and have outlined the structure and accessibility of the data. MESD is designed to serve as a standardized benchmark for evaluating and comparing MOSFET models, aiding semiconductor researchers and model developers in assessing the accuracy of their simulations against a robust set of controlled data.

IEEE SOCIETY/COUNCIL Circuits and Systems Society (CASS)

DATA TYPE/LOCATION Text; Shanghai, China

DATA DOI/PID 10.21227/wa5a-r991