Figures of Merit in High Frequency GaN-Based Parallel Split Gate Trench Power MOSFET Device

A parallel split-gate trench MOSFET (PSGT-MOSFET) with a vertical GaN device has been introduced for improving the trade-off between specific on-resistance (Ron) and figures of merit in high frequency (HF-FOM) using TCAD simulation. The PSGT-MOSFET yields superior performance by allowing higher drift doping by providing a thick field plate at the mid-trench region. As a result, the PSGT-MOSFET exhibits a 31 % smaller Ron, 10× reductions in HF-FOM (Crss x Ron), and 3x reductions in HF-FOM (QGD x Ron) with the same breakdown voltage in comparison to the TG-MOSFET. Consequently, the HF-FOMs have been improved, resulting in faster switching speeds, which makes them more efficient power conversion systems.