NbOx Selector with TiOy Interlayer for Improved Performance Featuring on-Off Ratio >500, Selectivity >500 and Switching Speed <70ns

In this work, we report on a Pt/NbOx/TiOy/Ag selector with all rounded performance (on-off ratio >500, selectivity >500, and switching speed <70 ns) that surpassed current reported state of art selector devices. The performance enhancement can be attributed to the insertion of a TiOy thermal barrier, elucidated via both careful material and electrical characterizations. In addition, the process temperature of the selector is kept well below 400°C, making it compatible with CMOS BEOL integration with emerging memories for high density storage applications.